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HAT2203C
Silicon N Channel MOS FET Power Switching
REJ03G0447-0400 Rev.4.00 May 19.2005
Features
* Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V) * Low drive current * High density mounting * 2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2345 DDD D 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) Ratings 20 12 2 8 2 830 150 -55 to +150 Unit V V A A A mW C C
Rev.4.00 May.19, 2005 page 1 of 6
HAT2203C
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 20 12 -- -- 0.4 -- -- 3 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 69 107 4.5 165 50 20 6 5 20 4 1.8 0.4 0.4 0.8 Max -- 10 1 1.4 90 150 -- -- -- -- -- -- -- -- -- -- -- 1.1 Unit V A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 4.5 VNote3 ID = 1 A, VGS = 2.5 VNote3 ID = 1 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 10 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note3
Rev.4.00 May.19, 2005 page 2 of 6
HAT2203C
Main Characteristics
Power vs. Temperature Derating 1600
Pch (mW)
-100
Maximum Safe Operation Area
Ta = 25C,1 shot Pulse
ID
1200
Test Conditions: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
(A)
-30 When using the FR4 board. -10 -3
D
10 s
PW
C O pe
1
100 s
Drain Current
Channel Dissipation
800
-1 -0.3 -0.1 -0.03
=
m
s
10
m
s
400
Operation in this area is limited by RDS(on)
ra tio n
(T a
= ) C 25
0
50
100
150 Ta (C)
200
-0.01 -0.01
Case Temperature
-0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V)
When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics 10 10 V Pulse Test 10 VDS = 10 V Pulse Test 25C Typical Transfer Characteristics
(A)
(A)
8 4.5 V 3V 4
2.5 V
8 -25C 6 Tc = 75 C
ID
6
Drain Current
Drain Current
2V
ID
1.5 V VGS = 1 V
4
2
2
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
Pulse Test
300
Drain to Source On State Resistance RDS(on) ()
400
Static Drain to Source on State Resistance vs. Drain Current 1000
VGS = 2.5V 100 4.5V
200 ID = 2 A 100 1A 0.5 A 0 6 2 4 Gate to Source Voltage 8 V GS (V) 10
10 0.1
Pulse Test Ta = 25 C 1 Drain Current 10 ID (A) 100
Rev.4.00 May.19, 2005 page 3 of 6
HAT2203C
Static Drain to Source on State Resistance vs. Temperature 200 Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance RDS(on) (m)
10 3 1 75C 0.3 0.1 0.03 0.01 0.01 Tc = -25C 25C
160 1A ID = 2 A 120 VGS = 2.5 V
0.5 A
80
0.5 A 2A 4.5 V 1A Pulse Test 0 25 50 75 100 125 150 Tc ( C) Case Temperature
40 0 -25
VDS = 10 V Pulse Test 0.03 0.1 0.3 1 ID (A) 3 10
Drain Current
Dynamic Input Characteristics 40
VDS (V)
Typical Capacitance vs. Drain to Source Voltage 8
10000
VGS 6
VGS (V)
ID = 2 A 30 VDD VDD = 5 V 10 V 20 V
3000
VGS = 0 f = 1 MHz
Capacitance C (pF)
1000 300 100 30 10 3 1
Drain to Source Voltage
Gate to Source Voltage
Ciss Coss Crss
20
4
10
VDD = 20 V 10 V 5V 0.8 1.6 2.4 3.2 Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage
2
0
0 4.0
0
4
8
12
16
20 V DS (V)
24
Drain to Source Voltage
10
IDR (A)
1000
Switching Characteristics
Switching Time t (ns)
8 6
5V
Reverse Drain Current
100 td(off) 10 td(on) tf tr
VGS = 0 , -5 V
4
2 Pulse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 Source to Drain Voltage
1 0.1
0.3
1 3 Drain Current
10 30 ID (A)
100
Rev.4.00 May.19, 2005 page 4 of 6
HAT2203C
Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Vin 4.5 V VDS = 10 V Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform
90%
Rev.4.00 May.19, 2005 page 5 of 6
HAT2203C
Package Dimensions
JEITA Package Code RENESAS Code PWSF0006JA-A Package Name CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A S A b
L
Reference Symbol
Dimension in Millimeters
e A2 A
yS
A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas
A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1
Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
c
A-A Section
1.65
Ordering Information
Part Name HAT2203C-EL-E Quantity 3000 pcs Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 May.19, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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